Electron-electron interactions, coupled plasmon-phonon modes, and mobility inn-type GaAs

Raman scattering by wave-vector-dependent coupled plasmon/LO-phonon modes in n-type InN

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Ab initio electron mobility and polar phonon scattering in GaAs

In polar semiconductors and oxides, the long-range nature of the electron-phonon (e-ph) interaction is a bottleneck to compute charge transport from first principles. Here, we develop an efficient ab initio scheme to compute and converge the e-ph relaxation times (RTs) and electron mobility in polar materials. We apply our approach to GaAs, where by using the Boltzmann equation with state-depen...

Coupled plasmon-phonon modes in a two-dimensional electron gas in the presence of Rashba effect

Elementary electronic excitation is studied theoretically for a two-dimensional electron gas in the presence of spin orbit (SO) interaction induced by Rashba effect. We find that in such a system, coupled plasmon-phonon excitation can be achieved via intraand inter-SO electronic transitions. As a result, six branches of the coupled plasmon-phonon oscillations can be observed. The interesting fe...

Electron-Phonon and Electron-Electron Interactions in Quantum Transport

The objective of this work is t o shed light on electron transport through sub-micron semiconductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device, the double barrier resonant tunneling diode. In this work we analyze particle interactions in two stru...

Electron-phonon interactions and superconductivity.